dmg10 2 3uv document number: ds31975 rev. 6 - 2 1 of 6 www.diodes.com april 2015 ? diodes incorporated dmg10 2 3u v dual p - channel enhancement mode mosfet features ? dual p - channel mosfet ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra - small surface mount package ? esd protected up to 3k v ? lead free by design/rohs compliant (note 1 ) ? halogen and antimony free "green" device (note 2) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot 563 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? terminals: finish - matte tin annealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 3) part number case packaging dmg10 2 3u v - 7 sot 563 3 , 000 / tape & reel dmg10 2 3u v - 13 sot 563 10 , 000 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. no purposely added lead. halogen and antimony free . 2. diodes inc.`s green policy can be found on our we bsite at http://www.diodes.com 3. for packaging details, go to our website at http://www.diodes.com . marking information date code key year 2008 2009 2010 2 011 2012 2013 2014 2015 2016 2017 code v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d t op view t op view b ottom v iew pa1 = product type marking code ym = date code marking y = year ( ex: w = 200 9 ) m = month ( ex: 9 = september ) sot563 s 1 d 1 d 2 s 2 g 1 g 2 pa1 ym esd protected to 3kv
dmg10 2 3uv document number: ds31975 rev. 6 - 2 2 of 6 www.diodes.com april 2015 ? diodes incorporated dmg10 2 3u v maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drai n - source voltage v dss - 20 v gate - source voltage v gss 6 v continuous drain current (note 4 ) v gs = - 4.5v steady state t a = 25c t a = 85 c i d - 1.03 - 0.68 a pulsed drain current (note 5 ) i dm - 3 a thermal characteristics characteristic sy mbol value unit power dissipation (note 4 ) p d 530 m w thermal resistance, junction to ambient @t a = 25c (note 4 ) r ja j , t stg - 55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - sou rce breakdown voltage bv dss - 20 - - v v gs = 0v, i d = - 250a j = 25c i dss - - - 100 n a v ds = - 20 v, v gs = 0v gate - source leakage i gss - - 2.0 a gs = 4.5 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) - 0.5 - - 1.0 v v ds = v gs , i d = - 250 a ds (on) - 0.5 0.7 5 gs = - 4.5v, i d = - 430 ma 0.7 1.05 v gs = - 2.5v, i d = - 300ma 1.0 1. 5 v gs = - 1.8v, i d = - 150ma - 20 v gs = - 1. 7 v, i d = - 1 0 0ma - 25 v gs = - 1. 5 v, i d = - 1 0 0ma forward transfer admittance |y fs | - 0.9 - s v ds = - 10 v, i d = - 250ma diode forward voltage v sd - 0.8 - 1.2 v v gs = 0v, i s = - 150ma dynamic characteristics (note 7 ) input capacitance c iss - 59.76 - pf v ds = - 16 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 12.07 - pf reverse transfer capacitance c rss - 6.36 - pf total gate charge q g - 622.4 - p c v gs = - 4.5 v, v ds = - 10 v, i d = - 250m a gate - source charge q gs - 100.3 - p c gate - drain cha rge q gd - 132.2 - p c turn - on delay time t d(on) - 5.1 - ns v dd = - 10 v, v gs = - 4.5 v, r l = 47 , r g = 10 d = - 200ma turn - on rise time t r - 8.1 - ns turn - off delay time t d(off) - 28.4 - ns turn - off fall time t f - 20.7 - ns notes: 4 . device mounted on fr - 4 pcb, with minimum recommended pad layout. 5 . repetitive rating, pulse width limited by junction temperature. 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to production te sting.
dmg10 2 3uv document number: ds31975 rev. 6 - 2 3 of 6 www.diodes.com april 2015 ? diodes incorporated dmg10 2 3u v 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 fig. 1 typical output characteristic -v , drain-source voltage (v) ds - i , d r a i n c u r r e n t ( a ) d v = -1.2v gs v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -4.5v gs v = -8.0v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic -v , gate-source voltage (v) gs 0 2 4 6 8 10 - i , d r a i n c u r r e n t ( a ) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.3 0.6 0.9 1.2 1.5 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -2.5v gs v = -4.5v gs v = -1.8v gs 0 0.2 0.4 0.6 0.8 1.0 0 0.3 0.6 0.9 1.2 1.5 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? -i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s o n v = -4.5v i = -1.0a gs d v = -2.5v i = -500ma gs d 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s o n ? v = -4.5v i = -1.0a gs d v = -2.5v i = -500ma gs d
dmg10 2 3uv document number: ds31975 rev. 6 - 2 4 of 6 www.diodes.com april 2015 ? diodes incorporated dmg10 2 3u v fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.4 0.8 1.2 1.6 - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = -1ma d i = -250a d 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current -v , source-drain voltage (v) sd 0 2 4 6 8 10 - i , s o u r c e c u r r e n t ( a ) s t = 25c a 1 10 100 0 5 10 15 20 fig. 9 typical total capacitance -v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) c iss c rss c oss f = 1mhz 0 4 8 12 16 20 fig. 10 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 1,000 - i , l e a k a g e c u r r e n t ( n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a 0.00001 0.001 0.01 0.1 1 10 100 1,000 fig. 11 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 260c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmg10 2 3uv document number: ds31975 rev. 6 - 2 5 of 6 www.diodes.com april 2015 ? diodes incorporated dmg10 2 3u v package outline dimensions suggested pad layout sot563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0 .10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
dmg10 2 3uv document number: ds31975 rev. 6 - 2 6 of 6 www.diodes.com april 2015 ? diodes incorporated dmg10 2 3u v important notice diodes incorporated makes no warranty of any kind, express or i mplied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries res erve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and it s representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signifi cant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. c ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support de vices or systems, and acknowledge and agree that they are solely responsible for all l egal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2012 , diodes incorporated www.diodes.com
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